Effect of Strain on Band Engineering in Gapped Graphene

Hasna Chnafa, Miloud Mekkaoui, Ahmed Jellal, Abdelhadi Bahaoui

Published 2020-07-09Version 1

We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically polarized dressing field in the presence of strain along armchair and zigzag directions. Our results show that the energy spectrum exhibits different symmetries and still isotropic for the strainless case, whereas it is linear as in the case of pristine graphene. It decreases slowly when strain is applied along the armchair direction but increases rapidly for the zigzag case. Moreover, it is found that the renormalized band gap changes along different strain magnitudes and does not change for the polarization phase $\theta$ compared to linear and circular polarizations where its values change oppositely.