Chern Insulators and Topological Flat-bands in Magic-angle Twisted Bilayer Graphene

Shuang Wu, Zhenyuan Zhang, K. Watanabe, T. Taniguchi, Eva Y. Andrei

Published 2020-07-07Version 1

Magic-angle twisted bilayer graphene (MA-TBG) features intriguing quantum phase transitions between strongly correlated states with superconducting, ferromagnetic or nematic order. Their emergence is triggered by enhanced electron-electron interactions when the flat bands in MA-TBG are partially filled by electrostatic doping. To date however, questions concerning the nature of these states and their connection to the putative non-trivial topology of the flat bands in MA-TBG are largely unanswered. Here we report on magneto-transport and Hall density measurements that reveal a succession of doping-induced Lifshitz transitions where discontinuous changes in the Fermi surface topology are accompanied by van Hove singularity (VHS) peaks10 in the density of states (DOS). The VHSs facilitate gapping-out the highly degenerate flat bands of MA-TBG, allowing to uncover the topological nature of the emerging minibands at doping levels corresponding to filled minibands. In the presence of a magnetic field the non-trivial topology of the minibands is revealed through well quantized Hall plateaus which signal the appearance of Chern insulators with integer Chern numbers, C=1,2,3. Surprisingly, for magnetic fields exceeding 5T we observe a new Lifshitz transition at a doping level of 3.5 electrons per moir\'e cell, suggesting the emergence in higher fields of a topological miniband at a fractional moir\'e filling.