arXiv Analytics

Sign in

arXiv:2001.05552 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$

Kingshuk Mallick, Aditya A. Wagh, Adrian Ionescu, Crispin H. W. Barnes, P. S. Anil Kumar

Published 2020-01-15Version 1

We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low-T in-plane orientation. In addition, considering MR contributions from the films' (111) texture and interface, we identify a T-window wherein the spin Hall effect induced spin Hall magnetoresistance (SMR) could be extracted.

Related articles: Most relevant | Search more
arXiv:0708.3316 [cond-mat.mes-hall] (Published 2007-08-24, updated 2008-04-16)
Anisotropic magnetoresistance in nanocontacts
arXiv:1409.3491 [cond-mat.mes-hall] (Published 2014-09-11)
Anisotropic magnetoresistance in antiferromagnetic Sr_2IrO_4
arXiv:1409.7250 [cond-mat.mes-hall] (Published 2014-09-25)
Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films