Topological surface states above the Fermi energy in $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$

T. J. Boyle, A. Rossi, M. Walker, P. Carlson, M. K. Miller, J. Zhao, P. Klavins, C. Jozwiak, A. Bostwick, E. Rotenberg, V. Taufour, I. Vishik, E. H. da Silva Neto

Published 2019-05-15Version 1

We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$. Using the combination of scanning tunneling spectroscopy and angle-resolved photo-emission spectroscopy with surface K-doping, we probe the band structure of $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$ with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band structure calculations. In particular, scanning tunneling spectroscopy measurements provide the first experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. This band inversion comprised of more localized d-states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.