Microwave absorption in a 2D topological insulators with a developed network of edge states

M. M. Mahmoodian, M. V. Entin

Published 2018-11-08Version 1

The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the overall sample. The optical transitions within the edge states yield the 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with the percolation arguments.