Negligible electronic contribution to heat transfer across intrinsic metal/graphene interfaces

Bin Huang, Yee Kan Koh

Published 2017-05-16Version 1

Despite the importance of high thermal conductance (i.e. low thermal resistance) of metal contacts to thermal management of graphene devices, prior reported thermal conductance of metal/graphene interfaces are all relatively low, only 20-40 MW m$^{-2}$ K$^{-1}$. One possible route to improve the thermal conductance ($G$) of metal/graphene interfaces is through additional heat conduction by electrons, since graphene can be easily doped by metals. In this paper, we evaluate the electronic heat conduction across metal/graphene interfaces by measuring the thermal conductance of Pd/transferred graphene (trG)/Pd interfaces, prepared by either thermal evaporation or radio-frequency (rf) magnetron sputtering, over a wide temperature range of 80 to 500 K. We find that for the samples prepared by thermal evaporation, the thermal conductance of Pd/trG/Pd is 42 MW m$^{-2}$ K$^{-1}$. The thermal conductance only weakly depends on temperature, which suggests that heat is predominantly carried by phonons across the intrinsic Pd/graphene interface. However, for Pd/trG/Pd samples with the top Pd films deposited by rf magnetron sputtering, we observe a significant increment of thermal conductance from the intrinsic value of 42 MW m$^{-2}$ K$^{-1}$ to 300 MW m$^{-2}$ K$^{-1}$, and $G$ is roughly proportional to $T$. We attribute the enhancement of thermal conductance to an additional channel of heat transport by electrons via atomic-scale pinholes formed in the graphene during the sputtering process. We thus conclude that electrons play a negligible role in heat conduction across intrinsic interfaces of metal and pristine graphene, and the contribution of electrons is only substantial if graphene is damaged.