Ultrafast Magnetization Reversal by Picosecond Electrical Pulses

Yang Yang, R. B. Wilson, Jon Gorchon, Charles-Henri Lambert, Sayeef Salahuddin, Jeffrey Bokor

Published 2016-09-21Version 1

Modern computers have stringent requirements for energy efficient and high-speed memory devices. Magnetic random access memory (MRAM) is of great interest for its low energy consumption due to non-volatility. However, MRAM is relatively slow compared to other charge based memories like static RAM or dynamic RAM, which take advantage of state-of-the-art transistors with picosecond operating speeds. The speed of MRAM is limited by the precessional dynamics of the magnetic medium. Optimal switching speed occurs when the magnetic field pulse is tuned to half the precessional period, which is typically hundreds of picoseconds. The speeds of other switching schemes, such as spin transfer torque (STT) or spin orbit torque (SOT), are similarly limited by precessional dynamics. Here, we show the first demonstration of magnetization reversal in the ferrimagnet film GdFeCo with a single sub-10 ps electrical pulse. Using stroboscopic pump-probe measurements, we observe only an 11 ps delay between the arrival of the electrical pulse and the reversal of the GdFeCo film's magnetization, which is more than an order of magnitude faster than previous work. We attribute the deterministic switching of GdFeCo to ultrafast Joule heating, a fundamentally different mechanism from other current induced switching, like STT or SOT, where spin injection and spin torques are necessary. The energy density required for switching is determined and found to be efficient, projecting to only 3.5 fJ needed to switch a (20 nm)3 cell. Our results offer a new route towards next generation magnetic memory that operates at picosecond speeds with high energy efficiency.