Charge filling factors in clean and disordered arrays of tunnel junctions

Kelly A. Walker, Nicolas Vogt, Jared H. Cole

Published 2015-07-16Version 1

We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in both clean and disordered arrays as a function of array and charge interaction length. The charge modulation of the current is highly sensitive to background charge disorder. We show that while small fractional charge filling factors are likely to be washed out in experimental devices due to strong background charge disorder, larger factors may be observable.