Linear magneto-resistance versus weak antilocalization effects in Bi2Te3 films

Z. H. Wang, L. Yang, X. T. Zhao, Z. D. Zhang, Xuan P. A. Gao

Published 2015-01-26Version 1

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect which generally persists to high fields and high temperatures. We have studied the MR of topological insulator Bi2Te3 films from the metallic to semiconducting transport regime. While in metallic samples, the WAL is difficult to identify due to the smallness of the WAL compared to the samples' conductivity, the sharp WAL dip in the MR is clearly present in the samples with higher resistivity. To correctly account for the low field MR by the quantitative theory of WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be separated from the WAL quantum correction. Otherwise the WAL fitting alone yields an unrealistically large coefficient $\alpha$ in the HLN analysis.