Measuring Critical Point Energies in Transition Metal Dichalcogenides

Chendong Zhang, Yuxuan Chen, Amber Johnson, Ming-Yang Li, Jing-Kai Huang, Lain-Jong Li, Chih-Kang Shih

Published 2014-12-29Version 1

By introducing a comprehensive form of scanning tunneling spectroscopy, we show that detailed electronic structures, in particular the critical point energies and their origins in the Brillouin Zone (BZ) can be mapped out in transition metal dichalcogenides (TMDs). This new capability allows us to gain new insights on how electronic structures of TMDs are influenced by the coupling between atomic orbitals, by the spin-orbital couplings, and by the interlayer couplings. We determine quantitatively how such couplings change the critical point energy locations which ultimately determine the electronic and optical properties. For example, contrary to all other SL-TMDs where the conduction band minimum (CBM) and valence band maximum occur at K, in $SL-WSe_2$ CBM occurs at lambda, leading to an indirect gap. Other detailed electronic structures are also determined. These new insights should have profound implications in the technological advancement of TMDs as the emerging 2D electronics and photonics materials.