Detection of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves

Miren Isasa, M. Carmen Martínez-Velarte, Estitxu Villamor, Luis Morellón, José M. De Teresa, Manuel R. Ibarra, Luis E. Hueso, Fèlix Casanova

Published 2014-09-30Version 1

The spin transport properties of bismuth (Bi) have been investigated using permalloy/bismuth/copper (Py/Bi/Cu) lateral spin valve structures. From spin absorption experiments, we show that the metallic surface of Bi acts as a strong spin sink. Moreover, we have measured a spin-to-charge current conversion that is attributed to the inverse Rashba-Edelstein effect (IREE) occurring at the Bi/Cu interface. By analyzing this spin-to-charge conversion as a function of temperature, the measurements exhibit a clear sign change at $\sim$ 125 K, corresponding to a change on the type of carriers dominating the electronic transport. These results evidence that the IREE arises from the spin splitting of the bulk states due to the Rashba effect at the metallic-Bi interface.