A. I. Volokitin, B. N. J. Persson
Published 2014-08-30Version 1
We investigate the van der Waals friction between graphene and an amorphous SiO$_2$ substrate. We find that due to this friction the electric current is saturated at a high electric field, in agreement with experiment. The saturation current depends weakly on the temperature, which we attribute to the quantum friction between the graphene carriers and the substrate optical phonons. We calculate also the frictional drag between two graphene sheets caused by van der Waals friction, and find that this drag can induce a voltage high enough to be easily measured experimentally.
Comments: 4 pages, 3 figures. arXiv admin note: substantial text overlap with arXiv:1012.5212, arXiv:1112.4912
Journal: Phys.Rev.Lett.106,094502(2011)
Near-field radiative heat transfer and van der Waals friction between closely spaced graphene and amorphous SiO$_2$
Quantum friction and graphene
Uncovering the Dominant Scatterer in Graphene Sheets on SiO2
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