arXiv Analytics

Sign in

arXiv:1406.5672 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Anomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature

R. M. Qiao, S. S. Yan, T. S. Xu, M. W. Zhao, Y. X. Chen, G. L. Liu, W. L. Yang, R. K. Zheng, L. M. Mei

Published 2014-06-22Version 1

Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.

Related articles: Most relevant | Search more
arXiv:cond-mat/0302562 (Published 2003-02-27, updated 2003-07-30)
Anomalous Hall Effect in Ferromagnetic Semiconductors in the Hopping Transport Regime
arXiv:2307.09708 [cond-mat.mes-hall] (Published 2023-07-19)
Theory of anomalous Hall effect in transition-metal pentatelluride $\mathrm{ZrTe}_{5}$ and $\mathrm{HfTe}_{5}$
arXiv:cond-mat/0405634 (Published 2004-05-27, updated 2004-07-01)
Anomalous Hall Effect and Skyrmion Number in Real- and Momentum-space