arXiv:1311.7329 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Gate controlled spin pumping at a quantum spin Hall edge
Awadhesh Narayan, Aaron Hurley, Stefano Sanvito
Published 2013-11-28Version 1
We propose a four-terminal device designed to manipulate by all electrical means the spin of a magnetic adatom positioned at the edge of a quantum spin Hall insulator. We show that an electrical gate, able to tune the interface resistance between a quantum spin Hall insulator and the source and drain electrodes, can switch the device between two regimes: one where the system exhibits spin pumping and the other where the adatom remains in its ground state. This demonstrates an all-electrical route to control single spins by exploiting helical edge states of topological materials.
Comments: 4 pages, 3 figures
Journal: Appl. Phys. Lett. 103, 142407 (2013)
DOI: 10.1063/1.4824068
Categories: cond-mat.mes-hall
Keywords: quantum spin hall edge, gate controlled spin pumping, quantum spin hall insulator, control single spins
Tags: journal article
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