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arXiv:1311.7329 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Gate controlled spin pumping at a quantum spin Hall edge

Awadhesh Narayan, Aaron Hurley, Stefano Sanvito

Published 2013-11-28Version 1

We propose a four-terminal device designed to manipulate by all electrical means the spin of a magnetic adatom positioned at the edge of a quantum spin Hall insulator. We show that an electrical gate, able to tune the interface resistance between a quantum spin Hall insulator and the source and drain electrodes, can switch the device between two regimes: one where the system exhibits spin pumping and the other where the adatom remains in its ground state. This demonstrates an all-electrical route to control single spins by exploiting helical edge states of topological materials.

Comments: 4 pages, 3 figures
Journal: Appl. Phys. Lett. 103, 142407 (2013)
Categories: cond-mat.mes-hall
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