A. Di Bartolomeo, S. Santandrea, F. Giubileo, F. Romeo, M. Petrosino, R. Citro, P. Barbara, G. Lupina, T. Schroeder, A. Rubino
Published 2012-10-09Version 1
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing double dip feature that we explain as the effect of doping due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and in the channel at different gate voltage.
Contact resistance at planar metal contacts on bilayer graphene and effects of molecular insertion layers
Contact resistance in graphene-based devices
Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance
![QR code for arXiv:1210.2531 [cond-mat.mes-hall]](http://oss.arxitics.com/images/favicon.svg)