arXiv Analytics

Sign in

arXiv:1208.0649 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice

D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler

Published 2012-08-03Version 1

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.

Related articles: Most relevant | Search more
arXiv:1203.4712 [cond-mat.mes-hall] (Published 2012-03-21, updated 2012-05-22)
Interaction of CO with an Au monatomic chain at different strains: electronic structure and ballistic transport
arXiv:1509.05207 [cond-mat.mes-hall] (Published 2015-09-17)
Ballistic transport in graphene antidot lattices
arXiv:cond-mat/0006497 (Published 2000-06-30)
Spin-splitting in GaAs 2D holes