arXiv:1208.0649 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice
D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler
Published 2012-08-03Version 1
We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.
Comments: 5 pages, 4 figures
Journal: Physical Review B 85, 121305(R) (2012)
Categories: cond-mat.mes-hall
Keywords: gaas 2d holes, strain-induced lateral superlattice, ballistic transport, gaas two-dimensional hole system, ballistic commensurability oscillations
Tags: journal article
Related articles: Most relevant | Search more
Interaction of CO with an Au monatomic chain at different strains: electronic structure and ballistic transport
arXiv:1509.05207 [cond-mat.mes-hall] (Published 2015-09-17)
Ballistic transport in graphene antidot lattices
Andreas Sandner et al.
arXiv:cond-mat/0006497 (Published 2000-06-30)
Spin-splitting in GaAs 2D holes