arXiv:1202.5943 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field
T. M. Godden, J. H. Quilter, A. J. Ramsay, Yanwen Wu, P. Brereton, I. J. Luxmoore, J. Puebla, A. M. Fox, M. S. Skolnick
Published 2012-02-27, updated 2012-04-11Version 2
The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.
Comments: 8 pages, 10 figs, published PRB 85 155310 (2012)
Journal: Phys. Rev. B 85 115310 (2012)
Categories: cond-mat.mes-hall
Keywords: voigt geometry magnetic field, inas/gaas quantum dot, single hole spin, fast preparation, bright-exciton fine-structure splitting
Tags: journal article
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