arXiv Analytics

Sign in

arXiv:1104.3678 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Shubnikov-de Haas oscillations of a single layer graphene under dc current bias

Zhenbing Tan, ChangLing Tan, Li Ma, G. T. Liu, L. Lu, C. L. Yang

Published 2011-04-19, updated 2011-08-14Version 2

Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.

Comments: 5 pages, 4 figures, A few references added
Journal: Physical Review B 84, 115429 (2011)
Categories: cond-mat.mes-hall
Related articles: Most relevant | Search more
arXiv:2101.01840 [cond-mat.mes-hall] (Published 2021-01-06)
Local Measurements of Shubnikov-de Haas Oscillations in Graphene Systems
arXiv:1412.3836 [cond-mat.mes-hall] (Published 2014-12-11)
Shubnikov-de Haas oscillations from topological surface states of metallic Bi$_2$Se$_{2.1}$Te$_{0.9}$
arXiv:1003.2669 [cond-mat.mes-hall] (Published 2010-03-13, updated 2010-08-18)
Tunneling Spin Injection into Single Layer Graphene