arXiv:1103.1837 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Kondo temperature of a quantum dot
Seungjoo Nah, Michael Pustilnik
Published 2011-03-09, updated 2012-06-13Version 2
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with the gate voltage-independent level width. The effect originates in high-order tunneling processes, which make a dominant contribution to the exchange amplitude when the gate voltage is tuned away from the middle of the Coulomb blockade valley.
Journal: Phys. Rev. B 85, 235311 (2012)
Categories: cond-mat.mes-hall, cond-mat.str-el
Keywords: kondo temperature, gate voltage-independent level width, anderson impurity model, coulomb blockade valley, blockaded quantum dot
Tags: journal article
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