arXiv:1012.5514 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Molecular dynamics simulations of oxide memristors: thermal effects
S. E. Savel'ev, A. S. Alexandrov, A. M. Bratkovsky, R. Stanley Williams
Published 2010-12-26Version 1
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.
Comments: submit/0169777; 6 pages, 4 figures
Journal: Applied Physics A: Materials Science & Processing (2011) Volume 102, Number 4, 891
Categories: cond-mat.mes-hall, quant-ph
Keywords: molecular dynamics simulations, oxide memristors, thermal effects, molecular-dynamic simulations, mobile ionic species
Tags: journal article
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