Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe

Rui Yang, Guolin Yu, Kuanghong Gao, Laiming Wei, Xinzhi Liu, Tie Lin, Shaoling Guo, Ning Dai, Junhao Chu

Published 2010-12-05Version 1

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions.