Yee Kan Koh, Myung-Ho Bae, David G. Cahill, Eric Pop
Published 2010-09-27, updated 2010-09-29Version 2
We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.
Comments: 22 pages, 4 figures, accepted for publication in Nano Letters (2010) This paper has been withdrawn by the authors upon request by Nano Letters. The paper will be available in Nano Letters very soon
Journal: Nano Lett. 2010, 10, 4363-4368
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