Oleg G. Balev, Fedir T. Vasko
Published 2010-05-22Version 1
Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation. The consideration is performed for the case when the intercarrier scattering effectively establishes the quasiequilibrium electron-hole distributions, with effective temperature and concentrations of carriers. The concentration and energy balance equations are solved taking into account an interplay between weak energy relaxation and generation-recombination processes. The nonlinear conductivity is calculated for the momentum relaxation caused by the elastic scattering. The current-voltage characteristics, and the transition between bipolar and monopolar regimes of conductivity are obtained and analyzed, for different temperatures and gate voltages.
Comments: Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article has been accepted by Journal of Applied Physics. After it is published, it will be found at http://jap.aip.org/japiau/107
Journal: J. Appl. Phys. 107, 124312 (2010); (5 pages)
Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field
Spectral and polarization dependencies of luminescence by hot carriers in graphene
Effect of DC electric field on longitudinal resistance of two dimensional electrons in a magnetic field
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