arXiv Analytics

Sign in

arXiv:0908.1900 [cond-mat.mes-hall]AbstractReferencesReviewsResources

How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect

Johannes Jobst, Daniel Waldmann, Florian Speck, Roland Hirner, Duncan K. Maude, Thomas Seyller, Heiko B. Weber

Published 2009-08-13Version 1

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.

Related articles: Most relevant | Search more
arXiv:1203.3299 [cond-mat.mes-hall] (Published 2012-03-15, updated 2012-07-12)
Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
E. Pallecchi et al.
arXiv:1304.4897 [cond-mat.mes-hall] (Published 2013-04-17)
Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
arXiv:1111.4918 [cond-mat.mes-hall] (Published 2011-11-21, updated 2013-08-02)
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Sarah Goler et al.