Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki

Published 2009-03-03, updated 2009-06-03Version 2

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.