arXiv:0901.4384 [cond-mat.dis-nn]AbstractReferencesReviewsResources
Concurrent Magnetic and Metal-Insulator Transitions in (Eu,Sm)B_6 Single Crystals
S. Yeo, J. E. Bunder, Hsiu-Hau Lin, Myung-Hwa Jung, Sung-Ik Lee
Published 2009-01-28Version 1
The effects of magnetic doping on a EuB_6 single crystal were investigated based on magnetic and transport measurements. A modest 5% Sm substitution for Eu changes the magnetic and transport properties dramatically and gives rise to concurrent antiferromagnetic and metal-insulator transitions (MIT) from ferromagnetic MIT for EuB6. Magnetic doping simultaneously changes the itinerant carrier density and the magnetic interactions. We discuss the origin of the concurrent magnetic MIT in (Eu,Sm)B_6.
Comments: 13 pages, 3 figures, final version to appear in Appl. Phys. Lett.
Journal: Appl. Phys. Lett. 94, 042509 (2009)
DOI: 10.1063/1.3077023
Categories: cond-mat.dis-nn
Keywords: metal-insulator transitions, single crystal, itinerant carrier density, concurrent magnetic mit, transport measurements
Tags: journal article
Related articles: Most relevant | Search more
arXiv:2303.02932 [cond-mat.dis-nn] (Published 2023-03-06)
Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors
arXiv:cond-mat/9706231 (Published 1997-06-23)
Dynamical mean-field studies of metal-insulator transitions
arXiv:cond-mat/0010430 (Published 2000-10-26)
Metal-insulator transitions in anisotropic 2d systems