Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

R. G. Dengel, C. Gould, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

Published 2009-01-21Version 1

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.