arXiv:0810.4539 [cond-mat.mes-hall]AbstractReferencesReviewsResources
All-graphene integrated circuits via strain engineering
Vitor M. Pereira, Antonio H. Castro Neto
Published 2008-10-27, updated 2009-02-19Version 3
We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states and confinement, the basic elements for all-graphene electronics. In addition this proposal has the advantage that patterning can be made on substrates rather than on the graphene sheet, thereby protecting the integrity of the latter.
Comments: Minor changes
Journal: Phys. Rev. Lett. 103, 046801 (2009)
Categories: cond-mat.mes-hall, cond-mat.mtrl-sci
Keywords: all-graphene integrated circuits, strain engineering, generate electron beam collimation, all-graphene integrated electronic devices, electronic structure
Tags: journal article
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