Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures

S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Published 2008-10-07Version 1

We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a narrow gap semiconductor and the linear photogalvanic effect in a bulk piezoelectric semiconductor. For the former we characterized both a HgTe quantum well and bulk Te, and for the latter, bulk GaAs. In contrast with optical methods our device is an easy to handle all-electric approach, which we demonstrated by applying a large number of different lasers from low power, continuous wave systems to high power, pulsed sources.