Coulomb oscillations in three-layer graphene nanostructures

J. Guettinger, C. Stampfer, F. Molitor, D. Graf, T. Ihn, K. Ensslin

Published 2008-06-09Version 1

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of $\approx 0.6$ meV is extracted.