arXiv:0804.0984 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Electronic Structure in Gapped Graphene with Coulomb Potential
W. Zhu, M. L. Liang, Q. W. Shi, Z. F. Wang, J. Chen, J. G. Hou
Published 2008-04-07Version 1
In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.
Comments: 5 page, 4 figures
Categories: cond-mat.mes-hall
Related articles: Most relevant | Search more
arXiv:0908.0154 [cond-mat.mes-hall] (Published 2009-08-02)
The Electronic Structure of Few-Layer Graphene: Probing the Evolution from a 2-Dimensional to a 3-Dimensional Material
arXiv:0811.2592 [cond-mat.mes-hall] (Published 2008-11-16)
Bound electron states in the monolayer graphene with short-range impurities
arXiv:1504.07812 [cond-mat.mes-hall] (Published 2015-04-29)
Electronic structure of interfaces between hexagonal and rhombohedral graphite