arXiv:0801.2292 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Crossed Andreev reflection in a graphene bipolar transistor
Published 2008-01-15, updated 2008-03-06Version 3
We investigate the crossed Andreev reflections between two graphene leads connected by a narrow superconductor. When the leads are respectively of the n-and p- type, we find that electron elastic cotunneling and local Andreev reflection are both eliminated even in the absence of any valley-isospin or spin polarizations. We further predict oscillations of both diagonal and cross conductances as a function of the distance between the graphene-superconductor interfaces.
Comments: 4 pages, 4 figures. Accepted in Physical Review Letters
Journal: Phys. Rev. Lett. 100, 147001 (2008)
Categories: cond-mat.mes-hall, cond-mat.supr-con
Keywords: crossed andreev reflection, graphene bipolar transistor, local andreev reflection, electron elastic, spin polarizations
Tags: journal article
Related articles: Most relevant | Search more
A Numerical Model of Crossed Andreev Reflection and Charge Imbalance
Crossed Andreev reflection versus electron transfer in graphene nanoribbons
Proposal for an all-electrical measurement of crossed Andreev reflection in topological insulators