{
  "id": "cond-mat/9911014",
  "version": "v2",
  "published": "1999-11-02T17:36:25.000Z",
  "updated": "2000-07-20T12:03:20.000Z",
  "title": "Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor",
  "authors": [
    "G. Schmidt",
    "L. W. Molenkamp",
    "A. T. Filip",
    "B. J. van Wees"
  ],
  "comment": "Revtex, 4 pages, 3 figures (eps), Definition of spin pilarization changed to standard definition in GMR, some straight forward algebra removed. To appear as PRB Rap. Comm. August 15th",
  "doi": "10.1103/PhysRevB.62.R4790",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2000-07-20T12:03:20.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "ferromagnetic metal",
      "basic obstacle",
      "electrical spin-injection",
      "diffusive semiconductor",
      "dimensional electron gas"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "RevTeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}