{
  "id": "cond-mat/9907367",
  "version": "v1",
  "published": "1999-07-23T15:23:53.000Z",
  "updated": "1999-07-23T15:23:53.000Z",
  "title": "Spin relaxation in semiconductor quantum dots",
  "authors": [
    "Alexander V. Khaetskii",
    "Yuli V. Nazarov"
  ],
  "comment": "6 pages, RevTex",
  "journal": "Phys. Rev. B, v.61, 12639 (2000).",
  "doi": "10.1103/PhysRevB.61.12639",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation of the electron in the dot both with and without a magnetic field. We have shown that the zero-dimensional character of the problem when electron wave functions are localized in all directions leads to freezing out of the most effective spin-flip mechanisms related to the absence of the inversion centers in the elementary crystal cell and at the heterointerface and, as a result, to unusually low spin-flip rates.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1999-07-23T15:23:53.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "semiconductor quantum dots",
      "spin relaxation",
      "gaas quantum dots",
      "elementary crystal cell",
      "electron wave functions"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "RevTeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}