{
  "id": "cond-mat/9903367",
  "version": "v3",
  "published": "1999-03-24T20:10:49.000Z",
  "updated": "1999-11-29T15:54:04.000Z",
  "title": "Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis",
  "authors": [
    "V. Senz",
    "U. Doetsch",
    "U. Gennser",
    "T. Ihn",
    "T. Heinzel",
    "K. Ensslin",
    "R. Hartmann",
    "D. Gruetzmacher"
  ],
  "comment": "4 pages (RevTeX), 3 figures (postscript) replaced by version published in special issue of Annalen d. Physik",
  "journal": "Annalen d. Physik, 8, Special Issue, 237-240, 1999",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.",
  "revisions": [
    {
      "version": "v3",
      "updated": "1999-11-29T15:54:04.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "metal-insulator transition",
      "spin axis",
      "gate controlled carrier density",
      "correlation length exponent",
      "parallel magnetic field"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "RevTeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "1999cond.mat..3367S"
    }
  }
}