{ "id": "cond-mat/9902169", "version": "v2", "published": "1999-02-11T14:57:39.000Z", "updated": "2014-11-18T22:10:16.000Z", "title": "Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz", "authors": [ "Mark Lee", "J. G. Massey", "V. L. Nguyen", "B. I. Shklovskii" ], "comment": "10 pages, 7 figures, published in Phys. Rev. B", "journal": "Physical Review B 60(3), 1582 (1999)", "doi": "10.1103/PhysRevB.60.1582", "categories": [ "cond-mat.dis-nn", "cond-mat.str-el" ], "abstract": "Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies, a DOS measurement distinguishes between insulating and metallic samples with densities 10 to 15 % on either side of the MIT. However, at higher energies the DOS of both insulators and metals show a common behavior, increasing roughly as the square-root of energy. The observed characteristics of the DOS can be understood using a classical treatment of Coulomb interactions combined with a phenomenological scaling ansatz to describe the length-scale dependence of the dielectric constant as the MIT is approached from the insulating side.", "revisions": [ { "version": "v1", "updated": "1999-02-11T14:57:39.000Z", "comment": "10 pages, 7 figures, submitted to Phys. Rev. B", "journal": null }, { "version": "v2", "updated": "2014-11-18T22:10:16.000Z" } ], "analyses": { "keywords": [ "metal-insulator transition", "scaling ansatz", "tunneling experiment", "coulomb gap", "doped semiconductor" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Phys. Rev. B" }, "note": { "typesetting": "TeX", "pages": 10, "language": "en", "license": "arXiv", "status": "editable" } } }