{
  "id": "cond-mat/9812224",
  "version": "v1",
  "published": "1998-12-14T15:55:44.000Z",
  "updated": "1998-12-14T15:55:44.000Z",
  "title": "Non-equilibrium spin accumulation in ferromagnetic single-electron transistors",
  "authors": [
    "Arne Brataas",
    "Yu. V. Nazarov",
    "J. Inoue",
    "G. E. W. Bauer"
  ],
  "comment": "9 postscript figures, to appear in The European Physical Journal B",
  "doi": "10.1007/s100510050784",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time- dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non- equilibrium spin accumulation.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1998-12-14T15:55:44.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "ferromagnetic single-electron transistors",
      "non-equilibrium spin accumulation",
      "dependent transport properties",
      "spin-flip relaxation time",
      "coulomb blockade"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}