{
  "id": "cond-mat/9810224",
  "version": "v1",
  "published": "1998-10-19T13:18:37.000Z",
  "updated": "1998-10-19T13:18:37.000Z",
  "title": "Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum",
  "authors": [
    "S. S. Murzin",
    "I. Claus",
    "A. G. M. Jansen",
    "N. T. Moshegov",
    "A. I. Toropov",
    "K. Eberl"
  ],
  "comment": "6 pages, 3 figures, 1 table",
  "journal": "Phys. Rev. B 59, 7330 (1999)",
  "doi": "10.1103/PhysRevB.59.7330",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional single-particle spectrum is induced by the electron-electron interaction. The Hall resistance R_xy of the thinnest sample reveals a wide plateau at small activation energy E_a=0.4 K found in the temperature dependence of the transverse resistance R_xx. The different minima in the transverse conductance G_xx of the different samples show a universal temperature dependence (logarithmic in a large range of rescaled temperatures T/T_0) which is reminiscent of electron-electron-interaction effects in coherent diffusive transport.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1998-10-19T13:18:37.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall effect",
      "disordered gaas layers",
      "electron-electron interaction",
      "3d spectrum",
      "temperature dependence"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}