{
  "id": "cond-mat/9806354",
  "version": "v1",
  "published": "1998-06-29T10:29:21.000Z",
  "updated": "1998-06-29T10:29:21.000Z",
  "title": "Gain Dependence of the Noise in the Single Electron Transistor",
  "authors": [
    "B. Starmark",
    "Torsten Henning",
    "A. N. Korotkov",
    "T. Claeson",
    "P. Delsing"
  ],
  "comment": "10 pages, LaTex 2.09, 4 figures (epsfig)",
  "doi": "10.1063/1.371020",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1998-06-29T10:29:21.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "single electron transistor",
      "gain dependence",
      "record low minimum charge noise",
      "resistance fluctuations",
      "external charge noise"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "LaTeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}