{
  "id": "cond-mat/9712135",
  "version": "v2",
  "published": "1997-12-12T11:56:03.000Z",
  "updated": "1998-03-02T13:04:48.000Z",
  "title": "Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum",
  "authors": [
    "M. A. Skvortsov"
  ],
  "comment": "7 pages, REVTeX. Mistake corrected; in the limit of a large chiral splitting the correction to the conductivity does not vanish but approaches the symplectic value",
  "doi": "10.1134/1.567636",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.",
  "revisions": [
    {
      "version": "v2",
      "updated": "1998-03-02T13:04:48.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "2d electron gas",
      "weak antilocalization",
      "chiral splitting",
      "quantum interference correction",
      "si-mosfets"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "RevTeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}