{
  "id": "cond-mat/9709105",
  "version": "v1",
  "published": "1997-09-09T14:24:58.000Z",
  "updated": "1997-09-09T14:24:58.000Z",
  "title": "Weak pinning: Surface growth in presence of a defect",
  "authors": [
    "F. Slanina",
    "M. Kotrla"
  ],
  "comment": "LaTeX, 19 pages, 7 figs, elsart.sty, submitted to Physica A",
  "journal": "Physica A 256 (1998) 1-17",
  "categories": [
    "cond-mat.stat-mech",
    "cond-mat.dis-nn"
  ],
  "abstract": "We study the influence of a point defect on the profile of a growing surface in the single-step growth model. We employ the mapping to the asymmetric exclusion model with blockage, and using Bethe-Ansatz eigenfunctions as a starting approximation we are able to solve this problem analytically in two-particle sector. The dip caused by the defect is computed. A simple renormalization group-like argument enables to study scaling of the dip with increasing length of the sample L; the RG mapping is calculated approximately using the analytical results for small samples. For a horizontal surface we found that the surface is only weakly pinned at the inhomogeneity; the dip scales as a power law L^\\gamma with \\gamma= 0.58496. The value of the exponent agrees with direct numerical simulations of the inhomogeneous single-step growth model. In the case of tilted surfaces we observe a phase transition between weak and strong pinning and the exponent in the weak pinning regime depends on the tilt.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1997-09-09T14:24:58.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "surface growth",
      "simple renormalization group-like argument enables",
      "weak pinning regime depends",
      "asymmetric exclusion model",
      "inhomogeneous single-step growth model"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "LaTeX",
      "pages": 19,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}