{
  "id": "cond-mat/9606114",
  "version": "v3",
  "published": "1996-06-17T06:30:24.000Z",
  "updated": "1996-10-24T07:00:09.000Z",
  "title": "Measurement of the conductance distribution function at a quantum Hall transition",
  "authors": [
    "D. H. Cobden",
    "E. Kogan"
  ],
  "comment": "10 pages, Revtex, 3 eps figures; final version with slight changes, accepted for publication in PRB Rapid Communications",
  "doi": "10.1103/PhysRevB.54.R17316",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and $e^2/h$. We point out that this is consistent with the prediction of random $S$-matrix theory for a conductor with single-channel leads in a magnetic field.",
  "revisions": [
    {
      "version": "v3",
      "updated": "1996-10-24T07:00:09.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall transition",
      "conductance distribution function",
      "measurement",
      "two-terminal submicron silicon mosfets",
      "quantum hall plateaus"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "RevTeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}