{
  "id": "cond-mat/0701398",
  "version": "v1",
  "published": "2007-01-17T05:55:39.000Z",
  "updated": "2007-01-17T05:55:39.000Z",
  "title": "Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As",
  "authors": [
    "Rafal Oszwaldowski",
    "Jacek A. Majewski",
    "Tomasz Dietl"
  ],
  "comment": "Comments accepted to: Proceedings of the 28th International Conference on the Physics of Semiconductors (AIP CP)",
  "journal": "Proceedings of the 28th International Conference on the Physics of Semiconductors (2006), AIP Conf. Proc. -- April 10, 2007 -- Volume 893, pp. 1277-1278",
  "doi": "10.1063/1.2730367",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2007-01-17T05:55:39.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin transport",
      "domain-wall resistance",
      "full valence band structure",
      "employ landauer-buttiker formalism",
      "large disorder regime"
    ],
    "tags": [
      "conference paper",
      "journal article"
    ],
    "publication": {
      "publisher": "AIP",
      "journal": "AIP Conf. Proc."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}