{
  "id": "cond-mat/0612339",
  "version": "v2",
  "published": "2006-12-13T20:23:59.000Z",
  "updated": "2006-12-30T21:41:05.000Z",
  "title": "Density and well width dependences of the effective mass of twodimensional holes in (100) GaAs quantum wells measured by cyclotron resonance at microwave frequencies",
  "authors": [
    "H. Zhu",
    "K. Lai",
    "D. C. Tsui",
    "S. P. Bayrakci",
    "N. P. Ong",
    "M. Manfra",
    "L. Pfeiffer",
    "K. West"
  ],
  "comment": "to appear in Solid State Communications",
  "doi": "10.1016/j.ssc.2006.12.006",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DH's) in carbon-doped (100) GaAs/AlxGa1-xAs heterostructures. The measured m_b shows strong dependences on both the 2DH density(p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4x10^11 to 1.1x10^11 cm^-2) studied here, m_b increases with p, consistent with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1x10^11 cm^-2, mb increases from 0.22 m_e at W = 10 nm to 0.50 m_e at W = 30 nm, and saturates around 0.51 m_e for W > 30 nm.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2006-12-30T21:41:05.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "gaas quantum wells",
      "microwave frequencies",
      "cyclotron resonance",
      "width dependences",
      "twodimensional holes"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}