{
  "id": "cond-mat/0609736",
  "version": "v1",
  "published": "2006-09-28T13:45:13.000Z",
  "updated": "2006-09-28T13:45:13.000Z",
  "title": "Hall resistivity of granular metals",
  "authors": [
    "M. Yu. Kharitonov",
    "K. B. Efetov"
  ],
  "comment": "4 pages, 1 figure",
  "journal": "Phys. Rev. Lett. 99, 056803 (2007)",
  "doi": "10.1103/PhysRevLett.99.056803",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "We calculate the Hall conductivity $\\sig_{xy}$ and resistivity $\\rho_{xy}$ of a granular system at large tunneling conductance $g_{T}\\gg 1$. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula $\\rho_{xy}=H/(n^* e c)$, where $n^*$ differs from the carrier density $n$ inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature $T$ correction to $\\rho_{xy}$ in the range $\\Ga \\lesssim T \\lesssim \\min(g_T E_c,\\ETh)$, where $\\Ga$ is the tunneling escape rate, $E_c$ is the charging energy and $\\ETh$ is the Thouless energy of the grain.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2006-09-28T13:45:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "granular metals",
      "coulomb interaction",
      "hall resistivity depends",
      "intragrain disorder",
      "carrier density"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}