{
  "id": "cond-mat/0608482",
  "version": "v1",
  "published": "2006-08-22T14:38:07.000Z",
  "updated": "2006-08-22T14:38:07.000Z",
  "title": "Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime",
  "authors": [
    "A. de Visser",
    "L. A. Ponomarenko",
    "G. Galistu",
    "D. T. N. de Lang",
    "A. M. M. Pruisken",
    "U. Zeitler",
    "D. Maude"
  ],
  "comment": "8 pages, accepted for publication in Proceedings of the Yamada Conference LX on Research in High Magnetic Fields (August 16-19, 2006, Sendai)",
  "journal": "J. Phys.: Conference Series 51 (2006) 379-386",
  "doi": "10.1088/1742-6596/51/1/088",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $\\rho_{xx}$ near the critical filling factor $\\nu_{c}$ ~ 0.5 follows the universal scaling law $\\rho_{xx}(\\nu, T) \\propto exp[-\\Delta \\nu/(T/T_{0})^{\\kappa}]$, where $\\Delta \\nu =\\nu -\\nu_{c}$. The critical exponent $\\kappa$ equals $0.56 \\pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2006-08-22T14:38:07.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall regime",
      "quantum critical behaviour",
      "plateau-insulator transition",
      "low-temperature high-field magnetotransport studies"
    ],
    "tags": [
      "conference paper",
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}