{
  "id": "cond-mat/0605230",
  "version": "v1",
  "published": "2006-05-09T12:57:59.000Z",
  "updated": "2006-05-09T12:57:59.000Z",
  "title": "Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors",
  "authors": [
    "R. Oszwałdowski",
    "J. A. Majewski",
    "T. Dietl"
  ],
  "comment": "4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Comm",
  "journal": "Phys. Rev. B 74, 153310 (2006) [4 pages]",
  "doi": "10.1103/PhysRevB.74.153310",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-B\\\"uttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2006-05-09T12:57:59.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "diluted ferromagnetic semiconductors",
      "band structure effects",
      "intrinsic domain-wall resistance",
      "spherical 4x4 kp model",
      "host band structure"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}