{
  "id": "cond-mat/0604118",
  "version": "v2",
  "published": "2006-04-05T05:58:39.000Z",
  "updated": "2006-06-02T06:59:30.000Z",
  "title": "Valley Polarization in Si(100) at Zero Magnetic Field",
  "authors": [
    "K. Takashina",
    "Y. Ono",
    "A. Fujiwara",
    "Y. Takahashi",
    "Y. Hirayama"
  ],
  "comment": "Accpeted for publication in Phys. Rev. Lett",
  "doi": "10.1103/PhysRevLett.96.236801",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley-polarization exist in (100) silicon even at zero magnetic field.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2006-06-02T06:59:30.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "zero magnetic field",
      "valley polarization",
      "valley splitting",
      "liquid helium temperature",
      "transport measurements"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}