{
  "id": "cond-mat/0511270",
  "version": "v1",
  "published": "2005-11-11T19:49:24.000Z",
  "updated": "2005-11-11T19:49:24.000Z",
  "title": "Spin current as a response to external stress",
  "authors": [
    "Prashant Sharma"
  ],
  "comment": "5 pages and 2 figures in eps format",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for $n$-doped semiconductors). We show that this spin-current is a property of the Fermi-Dirac sea, and is controlled by a geometric phase accumulated by the strain-induced Rashba parameters in a cycle.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2005-11-11T19:49:24.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin current",
      "external stress",
      "example iii-v compound",
      "traveling shear wave",
      "semiconductors"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2005cond.mat.11270S"
    }
  }
}