{
  "id": "cond-mat/0509375",
  "version": "v1",
  "published": "2005-09-14T15:23:08.000Z",
  "updated": "2005-09-14T15:23:08.000Z",
  "title": "Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire",
  "authors": [
    "T G Emam"
  ],
  "comment": "6 pages including 2 figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, $300 K$, and is also increased by about 23% over that associated with temperature of 500 K.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2005-09-14T15:23:08.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "binding energy",
      "low temperature",
      "room temperature",
      "shallow hydrogenic impurity",
      "cylindrical semiconductor gaas"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2005cond.mat..9375E"
    }
  }
}